发明名称 APPARATUS OF INSPECTING RESISTIVE DEFECTS OF SEMICONDUCTOR DEVICES AND INSPECTING METHOD USING THE SAME
摘要 A method of inspecting a resistive defect of a semiconductor device is provided. The method includes loading a semiconductor wafer on a wafer stocker, transferring the semiconductor wafer into a laser anneal module, annealing a portion of the semiconductor wafer using a laser beam in an atmospheric pressure, transferring the annealed semiconductor wafer into an E-beam scanning module in a vacuum, scanning the annealed portions of the semiconductor wafer with an E-beam, and collecting secondary electrons emitted from the annealed portions of the semiconductor wafer.
申请公布号 US2016084901(A1) 申请公布日期 2016.03.24
申请号 US201514677173 申请日期 2015.04.02
申请人 Samsung Electronics Co., Ltd. 发明人 PARK Mi-Ra;SUNG Dae-Jin;YANG Yu-Sin;LEE Na-Kyoung;LEE Sang-Kil;JUN Chung-Sam;JEONG Yong-Deok
分类号 G01R31/265 主分类号 G01R31/265
代理机构 代理人
主权项 1. A method of inspecting a resistive defect of a semiconductor device, comprising: loading a semiconductor wafer on a wafer stocker; transferring the semiconductor wafer into a laser anneal module using a transfer module; annealing a portion of the semiconductor wafer using a laser beam in an atmospheric pressure; transferring the annealed semiconductor wafer into an E-beam scanning module using the transfer module; scanning the annealed portion of the semiconductor wafer with an E-beam in a vacuum; and collecting secondary electrons emitted from the annealed portion of the semiconductor wafer.
地址 Suwon-si KR