THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR

摘要

A thin film transistor is provided. The thin film transistor comprises: a substrate; an active pattern comprising a nitride, the active pattern being arranged on the substrate; a protection pattern comprising a non-nitride, the protection pattern being arranged on the active pattern; a gate electrode superposed on the active pattern; and a gate insulating film between the gate electrode and the active pattern.