| 摘要 |
[Problem] To provide a non-volatile memory which suppresses erroneous writing during read operations. [Solution] A non-volatile memory is provided with: a first series circuit in which a first magnetoresistance element and a first selection transistor are connected in series; a second series circuit in which a second magnetoresistance element and a second selection transistor are connected in series; a first current suppression unit provided with first and second transistors; and a second current suppression unit provided with third and fourth transistors. The gates of the first and second selection transistors are connected to a first wire. One terminal of the first series circuit and the gate of the fourth transistor of the second current suppression unit are connected to a second wire. One terminal of the second series circuit and the gate of the second transistor of the first current suppression unit are connected to a third wire. Another terminal of the first series circuit and the gate of the third transistor of the second current suppression unit are connected to a fourth wire. Another terminal of the second series circuit and the gate of the first transistor of the first current suppression unit are connected to a fifth wire. |
