NON-VOLATILE RESISTIVE RANDOM ACCESS MEMORY CROSSBAR DEVICES WITH MAXIMIZED MEMORY ELEMENT DENSITY AND METHODS OF FORMING THE SAME

摘要

Non-volatile resistive random access memory crossbar devices and methods of fabricating the same are provided herein. In an embodiment, a non-volatile resistive random access memory crossbar device includes a crossbar array including a bitline and a wordline. A hardmask that includes dielectric material is disposed over the bitline. The hardmask and the bitline include a first sidewall. A memory element layer and a selector layer are disposed in overlying relationship on the first sidewall of the bitline and hardmask. The memory element layer and a selector layer are further disposed between the bitline and the wordline, to form a first memory element and selector pair.

主权项

1. A non-volatile resistive random access memory crossbar device comprising:
a crossbar array comprising a bitline and a wordline; a hardmask comprising dielectric material and disposed over the bitline, wherein the hardmask and the bitline comprise a first sidewall; and a memory element layer and a selector layer disposed in overlying relationship on the first sidewall of the bitline and hardmask, and further disposed between the bitline and the wordline, to form a first memory element and selector pair.