| 主权项 |
1. A nitride semiconductor structure, comprising:
a substrate; a first type nitride semiconductor layer, disposed on the substrate, wherein a first type dopant is doped into the first type nitride semiconductor layer; an active layer, disposed between the substrate and the first type nitride semiconductor layer, and comprising a first multiple quantum well structure and a second multiple quantum well structure, wherein the first multiple quantum well structure is a structure including a plurality of first quantum well layers and a plurality of first barrier layers stacked by interlacing, the second multiple quantum well structure is a structure including a plurality of second quantum well layers and a plurality of second barrier layers stacked by interlacing, and the first multiple quantum well structure is disposed between the first type nitride semiconductor layer and the second multiple quantum well structure; and a second type nitride semiconductor layer, disposed between the substrate and the active layer, a second type dopant being doped into the second type nitride semiconductor layer, wherein the second type dopant is doped into at least one of the second barrier layers, and a doping concentration of the second type dopant in the second barrier layer is higher than a doping concentration of the second type dopant in the second type nitride semiconductor layer. |
