THREE DIMENSIONAL NAND DEVICE HAVING NONLINEAR CONTROL GATE ELECTRODES AND METHOD OF MAKING THEREOF

摘要

A monolithic three dimensional NAND string includes a plurality of control gate electrodes extending substantially parallel to a major surface of a substrate in at least one active region, a plurality of semiconductor channels having at least one end portion of each of the plurality of semiconductor channels extending substantially perpendicular to the major surface of the substrate, at least one memory film located between each of the plurality of control gate electrodes and each respective semiconductor channel of the plurality of semiconductor channels, and at least one first slit trench extending substantially perpendicular to the major surface of the substrate. Each of the plurality of control gate electrodes has a nonlinear side wall adjacent to the at least one first slit trench in the at least one active region.