| 摘要 |
A semiconductor device includes a substrate (11), a semiconductor layer having a buffer layer (12), a spacer layer (13), and barrier layer (14) sequentially stacked on the substrate, and first (18) and second (17) ohmic electrodes installed on an upper surface of the barrier layer in the substrate to be separated from each other. Each of the first and second ohmic electrodes includes a portion formed on the upper surface of the barrier layer and electrode portions (17a, 18a) filling a plurality of grooves penetrating from the upper surface of the barrier layer through the barrier layer and the spacer layer and reaching a region of a two-dimensional electron gas layer formed in a spacer-layer side of the buffer layer, the electrode portions being in contact with side walls of each of the plurality of the grooves, and the portion formed on the upper surface of the barrier layer and the electrode portions are integrally formed. |
