Provided is a magnetic memory device including: a first magnetization layer; a tunnel barrier on the first magnetization layer; a second magnetization layer on the tunnel barrier; and a spin current assisting layer on at least a portion of a side wall of the second magnetization layer. The purpose of the present invention is to provide the magnetic memory device which can operate at low operation current.
申请公布号
KR20160031832(A)
申请公布日期
2016.03.23
申请号
KR20140122039
申请日期
2014.09.15
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
PI, UNG HWAN;KIM, KWANG SEOK;KIM, KEE WON;LEE, SUNG CHUL;JANG, YOUNG MAN