SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

A semiconductor light emitting element includes: a pit formation layer (13) formed on the first semiconductor layer and having a pyramidal pit (PT); and an active layer (14) formed on the pit formation (13) layer and having a flat portion (FW(1)-FW(n)) and an embedded portion (IW(1)-IW(n)) which is formed so as to embed the pit. The active layer has a multi-quantum well structure having at least one well layer (W(1)-(n)) and one barrier layer (B(1)-B((n)) laminated alternately in which each well layer and each barrier layer lie one upon another. The flat portion has a flat well portion corresponding to the well layer. The embedded portion has an embedded well portion corresponding to the well layer. The embedded well portion has a ring portion (RW(1)-RW(n)) which is formed in an interface with the flat well portion so as to surround the threading dislocation. The ring portion has a band gap smaller than that of the flat well portion.