| 摘要 |
An image-capturing apparatus including a solid-state imaging device including unit-cells arranged in a matrix, in which each of the unit-cells includes a photoelectric conversion unit including: a photoelectric conversion film formed above a semiconductor substrate; a pixel electrode formed on a surface of the photoelectric conversion film, the surface facing the semiconductor substrate; and a transparent electrode formed on a surface of the photoelectric conversion film, the surface being opposite the surface on which the pixel electrode is formed, and the image-capturing apparatus further includes: a voltage applying unit which applies, between the pixel electrode and the transparent electrode, a variable sensitivity voltage for controlling sensitivity of the solid-state imaging device; a level detecting unit which detects an output level of image-captured image data from the solid-state imaging device; and a controlling unit which varies the variable sensitivity voltage based on the output level detected by the level detecting unit. |
