发明名称 高周波半導体装置
摘要 <P>PROBLEM TO BE SOLVED: To provide a high-frequency semiconductor device capable of effectively using a mounting substrate with an enlarged width for mounting a semiconductor chip. <P>SOLUTION: The high-frequency semiconductor device includes: a conductor base plate; a semiconductor chip of a multi-cell configuration disposed on the conductor base plate; metal walls disposed on the conductor base plate and forming a rectangular cavity for including the semiconductor chip therein; and a through hole disposed at the input/output portion of the metal walls. In the rectangular cavity including the semiconductor chip surrounded by the metallic wall, the longitudinal direction of the semiconductor chip is disposed with a predetermined angle larger than 0 degree and smaller than 90 degrees from the extension direction of a metal wall having no through hole. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP5892770(B2) 申请公布日期 2016.03.23
申请号 JP20110250463 申请日期 2011.11.16
申请人 株式会社東芝 发明人 高木 一考
分类号 H01L23/12;H01L21/338;H01L23/02;H01L23/04;H01L27/095;H01L29/778;H01L29/812 主分类号 H01L23/12
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