| 摘要 |
A method is described for manufacturing a magnetic sensor module (100, 200, 300, 400) having magnetic sensor elements (130, 330, 430) monolithically integrated at a semiconductor chip (110) which comprises an integrated circuit. The described method comprises (a) providing a composite semiconductor arrangement (105) comprising (i) the semiconductor chip (110), (ii) contact elements (112) for the integrated circuit, which are formed on the semiconductor chip (110), and (iii) a dielectric layer (120) formed over the semiconductor chip (110) and over the contact elements (112), (b) forming a magnetic sensor layer providing the material for the magnetic sensor elements (130, 330, 430) monolithically over the dielectric layer (120), (c) exposing the contact elements (112) by removing a part of the dielectric layer (120) which part is located above the contact elements (112), and (d) forming an electric conductive protection layer (140, 240, 340, 440) over either the formed magnetic sensor layer or the exposed contact elements (112) in order to prevent negative interactions between (i) the step of forming the magnetic sensor elements (130, 330, 430) resulting from the magnetic sensor layer and (ii) the step of exposing the contacting elements (112). It is further described a magnetic sensor module (100, 200, 300, 400) which is manufactured by the above described method. |
