| 摘要 |
Disclosed is a method for testing a redundancy area in a semiconductor memory device. The disclosed method for testing a redundancy area comprises the following steps: receiving a redundancy address that selects a redundancy area in which spare memory cells are arranged to rescue normal memory cells; and judging the redundancy address whether the redundancy area is an area that is actually repaired by checking based on the information of repair uses. In addition, in case where the redundancy area is an area that is actually repaired, by enabling the redundancy area and outputting the data read from the enabled redundancy area, the redundancy area test is practically performed, thereby shortening the test time and overcoming an overkill problem. |
