| 摘要 |
A nonvolatile memory cell structure (102, 103, 104) includes a substrate (110) of a first conductivity, a first doping well (121) of a second conductivity disposed in said substrate (110), a second doping well (131) of said first conductivity disposed in said substrate (110), an antifuse gate (160) disposed on said first doping well (121), and a drain doping region (151) away from said antifuse gate (160). The antifuse gate (160) includes a gate conductive layer (161) disposed on said first doping well (121) and a gate oxide layer (162) disposed between said gate conductive layer (161) and said first doping well (121) and directly contacting said first doping well (121) . A current path (129) from said antifuse gate (160) to said drain doping region (151) travels through said first doping well (121) and said second doping well (131). |
