发明名称 Negative resist composition and patterning process
摘要 A negative resist composition comprises a base polymer comprising recurring units having an alkylthio group and having a Mw of 1000-2500, an acid generator, and a basic component, typically an amine compound containing a carboxyl group, but not active hydrogen. A 45-nm line-and-space pattern with a low value of LER can be formed.
申请公布号 EP2345934(B1) 申请公布日期 2016.03.23
申请号 EP20100016101 申请日期 2010.12.27
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 DOMON, DAISUKE;MASUNAGA, KEIICHI;TANAKA, AKINOBU;WATANABE, SATOSHI
分类号 G03F7/038;G03F7/004 主分类号 G03F7/038
代理机构 代理人
主权项
地址