| 摘要 |
A semiconductor device includes: a board; a power wire formed on the board; a signal wire formed on the board; a ground wire formed on the board; an insulating layer covering the signal wire, the power wire and the ground wire; and a metal film formed on the insulating layer, wherein a thickness of the insulating layer covering the power wire is different from a thickness of the insulating layer covering the signal wire, and the metal film is connected to a ground potential. |
