| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a semiconductor wafer laminate manufacturing method, which can sufficiently reduce voids at a bump part, sufficiently minimize warp after grinding and achieve thinning of a semiconductor device having a structure of laminated plurality of semiconductor elements when the semiconductor device is manufactured from a semiconductor wafer with an adhesive layer. <P>SOLUTION: A semiconductor device manufacturing method of the present invention comprises the steps of: forming a photosensitive adhesive layer by coating a liquid photosensitive adhesive on a circuit surface of a first semiconductor wafer having the circuit surface on which metal bumps are formed; obtaining a semiconductor wafer with an adhesive layer by bringing the photosensitive adhesive layer to a B-stage by light irradiation; obtaining a semiconductor wafer laminate by pressure bonding the semiconductor wafer with the adhesive layer with a second semiconductor wafer while sandwiching the adhesive layer of the semiconductor wafer with the adhesive layer; and cutting the semiconductor wafer laminate into a semiconductor element laminates in each of which semiconductor elements are laminated. <P>COPYRIGHT: (C)2013,JPO&INPIT |
