摘要 |
The present invention relates to a manufacturing method of substrate growth graphene, and to substrate growth graphene. The manufacturing method comprises: a. being equipped with a metal layer on a substrate; b. supplying carbon-containing gas and etching gas, and performing plasma-enhanced chemical vapor deposition (PECVD); c. supplying etching gas of a metal with the carbon-containing gas supply, and growing graphene on a metal layer; and d. growing the graphene on a substrate in which the metal layer is not contained, by continuously removing the entire metal in the metal layer, due to the etching gas, while performing the continuous plasma-enhanced chemical vapor deposition (PECVD), in c process. |