| 摘要 |
The present invention provides an n-type diffusion layer forming composition containing: a compound including a donor element; a metal compound being a compound different from the compound including the donor element, and containing at least one type of metal element selected from a group comprising an alkaline earth metal and an alkaline metal; and a dispersion medium. Also provided is a production method for a semiconductor substrate having an n-type diffusion layer, whereby the n-type diffusion layer forming composition is applied upon the semiconductor substrate and a composition layer is formed, and the semiconductor substrate having the composition layer formed thereon is heat treated. |
