发明名称 |
METHOD FOR PRODUCING SOS SUBSTRATES, AND SOS SUBSTRATE |
摘要 |
A method for producing SOS substrates which can be incorporated into a semiconductor production line, and is capable of producing SOS substrates which have few defects and no variation in defects, and in a highly reproducible manner, or in other words, a method for producing SOS substrates by: forming an ion-injection region (3) by injecting ions from the surface of a silicon substrate (1); adhering the ion-injection surface of the silicon substrate (1) and the surface of a sapphire substrate (4) to one another directly or with an insulating film (2) interposed therebetween; and then obtaining an SOS substrate (8) having a silicon layer (6) on the sapphire substrate (4), by detaching the silicon substrate in the ion-injection region (3). This method is characterized in that the orientation of the sapphire substrate (4) is a C-plane having an off-angle of 1 degree or less. |
申请公布号 |
EP2879177(A4) |
申请公布日期 |
2016.03.23 |
申请号 |
EP20130823217 |
申请日期 |
2013.07.18 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
KONISHI SHIGERU;KUBOTA YOSHIHIRO;KAWAI MAKOTO;AKIYAMA SHOJI;NAGATA KAZUTOSHI |
分类号 |
H01L27/12;H01L21/02;H01L21/762;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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