| 摘要 |
The purpose of the present invention is to provide a semiconductor device and a production method therefor, with which on/off ratio can be improved. The present invention is a semiconductor device provided with a gate electrode (5), a gate insulating film (4), a semiconductor layer (3), a source electrode (2s), and a drain electrode (2d). The present invention is characterized in that: the semiconductor layer (3) includes a source-contact region (3s) stacked upon the source electrode (2s) in the thickness direction of the semiconductor layer (3), a drain-contact region (3d) stacked upon the drain electrode (2d) in the thickness direction of the semiconductor layer (3), and a channel region (3c) between the source-contact region (3s) and the drain-contact region (3d); and the carrier concentration of the source-contact region (3s) is less than that of the channel region (3c). |
