Image sensor with pixel units having interleaved photodiodes

摘要

An image sensor includes a plurality of photodiodes arranged into an array of rows and columns. The photodiodes are grouped into pixel units, where each pixel unit includes at least four photodiodes and shared pixel unit circuitry coupled to each of the four photodiodes. In one aspect the shared pixel unit circuitry may include a shared source follower transistor. In another aspect the shared pixel unit circuitry includes a shared reset transistor. Two of the photodiodes of the pixel unit are in a first column of the array and another two of the photodiodes are in a second column of the array. One of the photodiodes in the second column is in a row that is between rows of the two photodiodes in the first column.

主权项

1. An image sensor, comprising a plurality of photodiodes arranged into an array of rows and columns, wherein the plurality of photodiodes are grouped into pixel units, each pixel unit including a first, a second, a third, and a fourth photodiode and shared pixel unit circuitry coupled to each of the first, second, third, and fourth photodiodes, wherein the shared pixel unit circuitry of each one of the pixel units comprises a single shared source follower transistor, wherein the first and second photodiodes are in a first column of the array and the third and fourth photodiodes are in a second column of the array, and wherein the third photodiode is in a row that is between a row of the first photodiode and a row of the second photodiode.