Semiconductor structure including stacked structure and method for forming the same

摘要

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate, a stacked structure, a dielectric layer, a conductive structure, a dielectric structure and a conductive plug. The stacked structure includes dielectric films and conductive films arranged alternately. The dielectric layer is between the conductive structure and a sidewall of the stacked structure. The dielectric structure is on the stacked structure and defining a through via. The conductive plug fills the through via and physically contacts one of the conductive films exposed by the through via and adjoined with the dielectric layer.

主权项

1. A semiconductor structure, comprising:
a substrate; a stacked structure comprising dielectric films and conductive films arranged alternately; a dielectric layer; a conductive structure, the dielectric layer being between the conductive structure and a sidewall of the stacked structure; a dielectric structure on the stacked structure and defining a through via; and at least one conductive plug, wherein the conductive plug fills the through via and physically contacting a first portion of one of the conductive films exposed by the through via and adjoined with the dielectric layer.