发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To manufacture an IPD both on a high-side switch and a low-side switch with ease.SOLUTION: A level shift circuit LSC is connected with an input terminal TPI, a first terminal TP1, and a ground terminal TPG. A drive power for the level shift circuit LSC is supplied via the first terminal TP1. An output signal of the level shift circuit LSC is input to a driver circuit DRC. The driver circuit DRC is connected with the first terminal TP1 and a second terminal TP2. A drive power for the driver circuit DRC is supplied via the first terminal TP1. In a transistor TR1, a gate electrode (G) is connected with the driver circuit DRC, a source (S) is connected with the second terminal TP2, and a drain (D) is connected with a third terminal TP3.SELECTED DRAWING: Figure 1
申请公布号 JP2016039440(A) 申请公布日期 2016.03.22
申请号 JP20140160452 申请日期 2014.08.06
申请人 RENESAS ELECTRONICS CORP 发明人 YANAGAWA HIROSHI
分类号 H03K17/06;H01L21/822;H01L21/8234;H01L27/04;H01L27/06;H03K17/687 主分类号 H03K17/06
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