| 摘要 |
PROBLEM TO BE SOLVED: To provide an ITO sputtering target with a high productivity and reliability improved by suppressing cracking and crazing occurring during sintering of the ITO sputtering target and during storing after sintering and to provide a method for the production thereof.SOLUTION: The ITO sputtering target has both a heightened ITO target density and a suppressed zirconium contamination achieved by controlling pulverization conditions, comprises 20-45 wt.% SnOand the balance comprising InOand unavoidable impurities, and has a sintered density of 7.10 g/cmor higher. |
