THROUGH ELECTRODE SUBSTRATE AND MANUFACTURING METHOD OF THE SAME, AND SEMICONDUCTOR DEVICE USING THROUGH ELECTRODE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a through electrode substrate which resolves failure associated with existence of a boundary at an insulating part arranged around a circumference of a through electrode; and provide a manufacturing method of the through electrode substrate.SOLUTION: A through electrode substrate comprises: a base substrate having a first surface and a second surface which are opposite to each other; and a through electrode arranged in a through hole which pierces the base substrate from the first surface to the second surface. The through electrode has a first end face on the first surface side and an end face on the second surface side, which are exposed on the first surface and the second surface from the base substrate, respectively, and a circumference of one of or both of the end face on the first surface side and the end face of the second surface side is covered with the base substrate.SELECTED DRAWING: Figure 11