Block selection circuit and semiconductor device having the same

摘要

A block selection circuit and a semiconductor device having the same may include a row decoder which includes a high voltage generating circuit configured to output a block selection voltage in response to upper addresses, switching circuits configured to receive the block selection voltage and a precharge high voltage, and forward the block selection voltage through one of the switching circuits that is selected in response to selection signals, and pass transistor groups configured to select a memory block in response to the forwarded block selection voltage.

主权项

1. A block selection circuit, comprising:
a row decoder configured to select a memory block in response to upper addresses included in row addresses; a level shifter configured to output a precharge high voltage by increasing an input voltage in response to a precharge signal; and a selection signal generator configured to generate selection signals in response to lowest addresses included in the row addresses and the precharge high voltage, wherein the row decoder comprises: a high voltage generating circuit configured to output a block selection voltage in response to the upper addresses; switching circuits configured to receive the block selection voltage and the precharge high voltage and forward the block selection voltage through one of the switching circuits that is selected in response to the selection signals; and pass transistor groups configured to select the memory block in response to the forwarded block selection voltage.