发明名称 |
Configurable bandwidth memory devices and methods |
摘要 |
Memory devices and methods are described, such as those that include a stack of memory dies and an attached logic die. Method and devices described provide for configuring bandwidth for selected portions of a stack of memory dies. Additional devices, systems, and methods are disclosed. |
申请公布号 |
US9293170(B2) |
申请公布日期 |
2016.03.22 |
申请号 |
US201314136925 |
申请日期 |
2013.12.20 |
申请人 |
Micron Technology, Inc. |
发明人 |
Jeddeloh Joe M. |
分类号 |
G11C5/02;G11C5/06;G11C11/4093;G06F13/42 |
主分类号 |
G11C5/02 |
代理机构 |
Schwegman Lundberg & Woessner, P.A. |
代理人 |
Schwegman Lundberg & Woessner, P.A. |
主权项 |
1. A memory device, comprising:
a stack of memory dies, including a number of memory portions; a logic die coupled to the stack of memory dies; a memory fabric control register selectably coupled to the number of memory portions to select a number of memory portions that operate synchronously for a single memory request; wherein each memory portion includes both a direct connection to an originating and/or destination device, and a buffered connection to the originating and/or destination device. |
地址 |
Boise ID US |