发明名称 Configurable bandwidth memory devices and methods
摘要 Memory devices and methods are described, such as those that include a stack of memory dies and an attached logic die. Method and devices described provide for configuring bandwidth for selected portions of a stack of memory dies. Additional devices, systems, and methods are disclosed.
申请公布号 US9293170(B2) 申请公布日期 2016.03.22
申请号 US201314136925 申请日期 2013.12.20
申请人 Micron Technology, Inc. 发明人 Jeddeloh Joe M.
分类号 G11C5/02;G11C5/06;G11C11/4093;G06F13/42 主分类号 G11C5/02
代理机构 Schwegman Lundberg & Woessner, P.A. 代理人 Schwegman Lundberg & Woessner, P.A.
主权项 1. A memory device, comprising: a stack of memory dies, including a number of memory portions; a logic die coupled to the stack of memory dies; a memory fabric control register selectably coupled to the number of memory portions to select a number of memory portions that operate synchronously for a single memory request; wherein each memory portion includes both a direct connection to an originating and/or destination device, and a buffered connection to the originating and/or destination device.
地址 Boise ID US