发明名称 Multigate resonant channel transistor
摘要 An embodiment includes an oscillator comprising an amplifier formed on a substrate; a multiple gate resonant channel array, formed on the substrate, including: (a) transistors including fins, each of the fins having a channel between source and drain nodes, coupled to common source and drain contacts; and (b) common first and second tri-gates coupled to each of the fins and located between the source and drain contacts; wherein the fins mechanically resonate at a first frequency when one of the first and second tri-gates is periodically activated to produce periodic downward forces on the fins. Other embodiments include a non planar transistor with a channel between the source and drain nodes and a tri-gate on the fin; wherein the fin mechanically resonates when the first tri-gate is periodically activated to produce periodic downward forces on the fin. Other embodiments are described herein.
申请公布号 US9294035(B2) 申请公布日期 2016.03.22
申请号 US201313994714 申请日期 2013.03.28
申请人 Intel Corporation 发明人 Manipatruni Sasikanth;Kim Raseong;Baskaran Rajashree;Dokania Rajeev K.;Young Ian A.
分类号 H03B5/12;H03B5/30;H01L29/66;H01L29/78 主分类号 H03B5/12
代理机构 Trop, Pruner & Hu, P.C. 代理人 Trop, Pruner & Hu, P.C.
主权项 1. A mechanical resonator apparatus comprising: a nonplanar transistor including a fin that includes source and drain nodes, and a channel between the source and drain nodes; an additional source node included in the fin and an additional channel between the additional source node and the drain node; a first tri-gate, which is nonplanar, on the fin between the source and drain nodes; and first insulation included between the first tri-gate and the fin; a second tri-gate, which is nonplanar, on the fin between the source and drain nodes; and second insulation included between the second tri-gate and the fin; a third tri-gate, which is nonplanar, on the fin between the additional source node and the drain node; and a third insulation included between the third tri-gate and the fin; wherein at least a portion of the channel extends between the first and second tri-gates; wherein the fin mechanically resonates when the first tri-gate is periodically activated to produce periodic downward forces on the fin; wherein a mechanical resonator includes the source and drain nodes and an additional mechanical resonator, coupled to the mechanical resonator, includes the additional source node and the drain node.
地址 Santa Clara CA US
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