发明名称 |
Multigate resonant channel transistor |
摘要 |
An embodiment includes an oscillator comprising an amplifier formed on a substrate; a multiple gate resonant channel array, formed on the substrate, including: (a) transistors including fins, each of the fins having a channel between source and drain nodes, coupled to common source and drain contacts; and (b) common first and second tri-gates coupled to each of the fins and located between the source and drain contacts; wherein the fins mechanically resonate at a first frequency when one of the first and second tri-gates is periodically activated to produce periodic downward forces on the fins. Other embodiments include a non planar transistor with a channel between the source and drain nodes and a tri-gate on the fin; wherein the fin mechanically resonates when the first tri-gate is periodically activated to produce periodic downward forces on the fin. Other embodiments are described herein. |
申请公布号 |
US9294035(B2) |
申请公布日期 |
2016.03.22 |
申请号 |
US201313994714 |
申请日期 |
2013.03.28 |
申请人 |
Intel Corporation |
发明人 |
Manipatruni Sasikanth;Kim Raseong;Baskaran Rajashree;Dokania Rajeev K.;Young Ian A. |
分类号 |
H03B5/12;H03B5/30;H01L29/66;H01L29/78 |
主分类号 |
H03B5/12 |
代理机构 |
Trop, Pruner & Hu, P.C. |
代理人 |
Trop, Pruner & Hu, P.C. |
主权项 |
1. A mechanical resonator apparatus comprising:
a nonplanar transistor including a fin that includes source and drain nodes, and a channel between the source and drain nodes; an additional source node included in the fin and an additional channel between the additional source node and the drain node; a first tri-gate, which is nonplanar, on the fin between the source and drain nodes; and first insulation included between the first tri-gate and the fin; a second tri-gate, which is nonplanar, on the fin between the source and drain nodes; and second insulation included between the second tri-gate and the fin; a third tri-gate, which is nonplanar, on the fin between the additional source node and the drain node; and a third insulation included between the third tri-gate and the fin; wherein at least a portion of the channel extends between the first and second tri-gates; wherein the fin mechanically resonates when the first tri-gate is periodically activated to produce periodic downward forces on the fin; wherein a mechanical resonator includes the source and drain nodes and an additional mechanical resonator, coupled to the mechanical resonator, includes the additional source node and the drain node. |
地址 |
Santa Clara CA US |