High voltage III-nitride semiconductor devices

摘要

A III-N device is described has a buffer layer, a first III-N material layer on the buffer layer, a second III-N material layer on the first III-N material layer on an opposite side from the buffer layer and a dispersion blocking layer between the buffer layer and the channel layer. The first III-N material layer is a channel layer and a compositional difference between the first III-N material layer and the second III-N material layer induces a 2DEG channel in the first III-N material layer. A sheet or a distribution of negative charge at an interface of the channel layer and the dispersion blocking layer confines electrons away from the buffer layer.

主权项

1. A method of forming a III-N device, comprising:
forming a first III-N material layer on a buffer layer; forming a second III-N material layer on an opposite side of the first III-N material layer from the buffer layer, wherein the first III-N material layer is a channel layer and a compositional difference between the first III-N material layer and the second III-N material layer induces a 2DEG channel in the first III-N material layer; and forming a dispersion blocking layer between the buffer layer and the channel layer, the dispersion blocking layer being doped with Fe, Mg, Be, C, or Zn; wherein a sheet or a distribution of negative charge at an interface of the channel layer and the dispersion blocking layer confines electrons away from the buffer layer; a band-edge discontinuity at the interface of the channel layer and the dispersion blocking layer results in a conduction band edge directly adjacent to the interface being higher in the dispersion blocking layer than in the channel layer; and a conduction band minimum of the dispersion blocking layer is within the dispersion blocking layer and away from the interface.