Nitride semiconductor epitaxial wafer and nitride semiconductor device

摘要

A nitride semiconductor epitaxial wafer includes a substrate, and a nitride semiconductor layer formed on the substrate, the nitride semiconductor layer including a (002) plane in an upper surface thereof. An in-plane dispersion of a full width half maximum (FWHM) of an X-ray rocking curve in the (002) plane or a (100) plane of the nitride semiconductor layer is not more than 30%. The wafer is not less than 100 μm in thickness and not less than 50 mm in diameter.

主权项

1. A nitride semiconductor epitaxial wafer, comprising:
a substrate; and a nitride semiconductor layer formed on the substrate, the nitride semiconductor layer comprising a (002) plane in an upper surface thereof, wherein an in-plane dispersion of a full width half maximum (FWHM) of an X-ray rocking curve in the (002) plane or a (100) plane of the nitride semiconductor layer is not more than 30%, wherein the in-plane dispersion of the FWHM of the nitride semiconductor layer is represented by a formula ((maximum value)−(minimum value))/(average value) based on values of the FWHM of the nitride semiconductor layer measured in a center of the nitride semiconductor epitaxial wafer, at least two first measurement points located from the center along a X direction, and at least two second measurement points located from the center along a Y direction, wherein the X direction and the Y direction are mutually arranged perpendicularly, and wherein the wafer is not less than 100 μm in thickness and not less than 50 mm in diameter.