发明名称 Functional block stacked 3DIC and method of making same
摘要 An embodiment device package includes a fan-out redistribution layer (RDL), a device over and bonded to the fan-out RDL, and a molding compound over the fan-out RDL and extending along sidewalls of the device. The device includes a first functional tier having a first metallization layer and a second functional tier having a second metallization layer. The second functional tier is bonded to the first functional tier. The device further includes an interconnect structure electrically connecting the first metallization layer to the second metallization layer. The interconnect structure includes an inter-tier via (ITV) at least partially disposed in both the first functional tier and the second functional tier, and the ITV contacts the first metallization layer.
申请公布号 US9293437(B2) 申请公布日期 2016.03.22
申请号 US201414469303 申请日期 2014.08.26
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Yu Chen-Hua;Yee Kuo-Chung;Tung Chih-Hang
分类号 H01L23/48;H01L23/00;H01L25/065;H01L21/768;H01L23/31;H01L23/538 主分类号 H01L23/48
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A device package comprising: a fan-out redistribution layer (RDL); a device bonded to the fan-out RDL, the device comprising: a first functional tier comprising: a first substrate;first active devices on the first substrate; anda first metallization layer electrically connecting the first active devices;a second functional tier bonded to the first function tier, wherein the second functional tier comprises: a second substrate;second active devices on the second substrate; anda second metallization layer electrically connecting the second active devices; andan interconnect structure electrically connecting the first metallization layer to the second metallization layer, wherein the interconnect structure comprises an inter-tier via (ITV) at least partially disposed in both the first functional tier and the second functional tier, and wherein the ITV contacts the first metallization layer; and a molding compound over the fan-out RDL and extending along sidewalls of the device.
地址 Hsin-Chu TW