发明名称 |
Metal contact for chip packaging structure |
摘要 |
A chip packaging structure and packaging method. The packaging structure comprises: a semiconductor substrate; a metal pad provided inside the semiconductor substrate; an insulating layer provided on the semiconductor substrate, the insulating layer having an opening for exposing the metal pad; a sub-ball metal electrode provided on the metal pad; a solder ball provided on the surface of the sub-ball metal electrode, the solder ball having a first apron structure and the first apron structure covering partial metal pad on the periphery of the bottom of the under-ball metal electrode. The chip packaging structure of the present invention enhances the adhesion between the solder ball and the metal pad, and improves the reliability in chip packaging. |
申请公布号 |
US9293432(B2) |
申请公布日期 |
2016.03.22 |
申请号 |
US201314441477 |
申请日期 |
2013.10.30 |
申请人 |
NANTONG FUJITSU MICROELECTRONICS CO., LTD. |
发明人 |
Lin Chang-Ming;Shi Lei;Shen Haijun |
分类号 |
H01L23/48;H01L21/00;B23K31/02;H01L23/00;H01L23/498 |
主分类号 |
H01L23/48 |
代理机构 |
RatnerPrestia |
代理人 |
RatnerPrestia |
主权项 |
1. A chip package structure, comprising:
a semiconductor substrate; a metal pad inside the semiconductor substrate; an insulating layer on the semiconductor substrate, the insulating layer having an opening exposing a first surface of the metal pad; a sub-ball metal electrode on the first surface of the metal pad, wherein the sub-ball metal electrode partially covers the first surface; a solder ball encompassing the sub-ball metal electrode, wherein the solder ball comprises a first portion extending from the bottom part of the sub-ball metal electrode along directions substantially in parallel with the first surface, such that the first portion of the solder ball covers at least a part of the first surface which is not covered by the sub-ball metal electrode; and a covering layer disposed between the solder ball and the sub-ball metal electrode, and between the solder ball and the first surface of the metal pad, wherein the covering layer is a stacked structure comprising an anti-diffusion layer and a wetting layer, wherein the anti-diffusion layer is disposed on the surface of the sub-ball metal electrode and has a first apron structure, and the wetting layer is disposed on a surface of the anti-diffusion layer and has a second apron structure. |
地址 |
Jiangsu CN |