发明名称 |
Semiconductor memory and voltage output measuring method of the semiconductor memory |
摘要 |
A semiconductor memory device includes a first comparative device, to which first and second voltages are input; a first capacitor, which accumulates the electrical potential of a first node; a power source, which outputs the first electric current to a second node; a resistor, which generates a third voltage in the second node; a second capacitor, which accumulates the electric potential of the second node; first switches, which make a common connection at a third node possible for the first node and the second node, to which the first capacitor and the second capacitor are connected respectively; and a second comparison device, which uses as an input voltage a fourth voltage, which is obtained as a result of the charge share between the first and the second capacitors and the electrical potential of a fourth node, and equalizes the electrical potential of the fourth node with the fourth voltage. |
申请公布号 |
US9293175(B2) |
申请公布日期 |
2016.03.22 |
申请号 |
US201213607493 |
申请日期 |
2012.09.07 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Sakurai Katsuaki;Iwata Yoshihisa |
分类号 |
G11C16/30;G11C5/14 |
主分类号 |
G11C16/30 |
代理机构 |
Patterson & Sheridan, LLP |
代理人 |
Patterson & Sheridan, LLP |
主权项 |
1. A semiconductor memory having a voltage generator, the voltage generator comprising:
a first comparison device configured to have a first voltage input thereto, compare the first voltage with a second voltage at a first node, and to output a comparison result that causes the second voltage at the first node to be equal to the first voltage; a first capacitor connected between ground and a second node; a first switch configured to electrically connect and disconnect the first and second nodes; a current source configured to output a current to a third node; a first resistor connected between ground and the third node; a second capacitor connected between ground and a fourth node; a second switch configured to electrically connect and disconnect the third and fourth nodes; a third switch configured to electrically connect and disconnect the second node and a fifth node, and a fourth switch configured to electrically connect and disconnect the fourth node and the fifth node; and a second comparison device configured to have a third voltage input thereto, compare the third voltage with a fourth voltage, and to output an output voltage, wherein the third voltage is a voltage at the fifth node and the fourth voltage is a percentage of the output voltage. |
地址 |
Tokyo JP |