| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory capable of enhancing the accuracy of read data. <P>SOLUTION: In the semiconductor memory, in the case of determining a value of read data on the basis of a difference between read signals which have been read from a memory cell through first bit lines BL<SB POS="POST">0</SB>to BL<SB POS="POST">m</SB>and second bit lines BLV<SB POS="POST">0</SB>to BLV<SB POS="POST">m</SB>, when an electric current passes through both of the first and second bit lines, the semiconductor memory determines that the memory cell is in the state where the data are erased, and outputs a fixed data value as the read data regardless of the determined value of the data. <P>COPYRIGHT: (C)2013,JPO&INPIT |
