| 摘要 |
PROBLEM TO BE SOLVED: To provide a selective growth method of a carbon nanowall.SOLUTION: A Ti film 101 of a pattern in which a square is arranged in a shape of a triangular lattice is formed on a substrate 100 consisting of SiO. Next, a carbon nanowall is made to grow up on the SiOsubstrate 100. Then, growth is terminated in time that is longer than growth starting time of the carbon nanowall from Ti, and is shorter than that of the carbon nanowall from the SiO. Here, the growth starting time of the carbon nanowall from the SiOis longer than the growth starting time from the Ti. As a result, on the SiOsubstrate 100, the carbon nanowall does not grow up in a region in which the SiOis exposed with no Ti film 101 formed, and the carbon nanowall 102 is formed only on the Ti film 101. |
