Hybrid fin field-effect transistor structures and related methods

摘要

Semiconductor-on-insulator structures facilitate the fabrication of devices, including MOSFETs that are at least partially depleted during operation and FinFETs including bilayer fins and/or crystalline oxide.

主权项

1. A device comprising:
a substrate; an insulator layer over the substrate; and a complementary device comprising a first device in a first region of the substrate and a second device in a second region of the substrate,
the first device comprising:
a first portion of a first strained layer over and contacting the insulator layer in the first region of the substrate, the first strained layer being strained a first strain type,a first gate structure over the first portion of the first strained layer, the first gate structure defining a first channel region in the first portion of the first strained layer, anda first source/drain region and a second source/drain region disposed on opposite sides of the first gate structure, andthe second device comprising:
a second portion of the first strained layer over and contacting the insulator layer in the second region of the substrate;a second strained layer over the second portion of the first strained layer in the second region of the substrate, the second strained layer being strained a second strain type different from the first strain type,a second gate structure over the second strained layer, the second gate structure defining a second channel region in the second strained layer, anda third source/drain region and a fourth source/drain region disposed on opposite sides of the second gate structure.