发明名称 |
Silicon nitride substrate, circuit substrate and electronic device using the same |
摘要 |
A silicon nitride substrate comprises a substrate comprising a silicon nitride sintered body, and a plurality of granular bodies containing silicon and integrated to a principal surface of the substrate, wherein a plurality of needle crystals or column crystals comprising mainly silicon nitride are extended from a portion of the granular bodies. A brazing material is applied to a principal surface of the substrate, and a circuit member and a heat radiation member are arranged on the applied brazing material, and bonded by heating. Because of a plurality of granular bodies integrated to the principal surface of the substrate, and a plurality of the needle crystals or the column crystals extended from a portion of the granular bodies, a high anchor effect is produced so that the circuit member and the heat radiation member are firmly bonded to the silicon nitride substrate. |
申请公布号 |
US9293384(B2) |
申请公布日期 |
2016.03.22 |
申请号 |
US201113522218 |
申请日期 |
2011.01.13 |
申请人 |
KYOCERA Corporation |
发明人 |
Ishimine Yuusaku;Moriyama Masayuki;Komatsubara Kenji |
分类号 |
H01L23/15;H05K7/20;H05K1/00;B32B33/00;H01L23/13;H01L35/32;C04B35/587;C04B37/02;H05K1/03;H05K3/38 |
主分类号 |
H01L23/15 |
代理机构 |
Procopio, Cory, Hargreaves & Savitch LLP |
代理人 |
Procopio, Cory, Hargreaves & Savitch LLP |
主权项 |
1. A silicon nitride substrate comprising a substrate comprising a silicon nitride sintered body, and a plurality of granular bodies containing silicon and integrated to a principal surface of the substrate, wherein
a plurality of needle crystals or column crystals comprising mainly silicon nitride are extended from a surface of the granular bodies at an extended length of 2 μm or more and 10 μm or less, and wherein a diameter of the needle crystals or the column crystals at the middle of the extended length is 0.2 μm or more and 5 μm or less. |
地址 |
Kyoto JP |