Laterally aligned colloidal nanorods assemblies

摘要

Nanorods assemblies that have lengths in excess of 50 microns to meters are formed from contacting rice-shaped colloidal superparticles that are aligned along the long axis of the colloidal superparticles. The rice-shaped colloidal superparticles are formed from a multiplicity of nanorods with a high degree of association that is end to end to form colloidal superparticles that are in excess of three microns in length and have a length to diameter ratio of about three or more. Methods of preparing the rice-shaped colloidal superparticles employ mixing with an additional ligand to the nanorods to bias the self assembly of the nanorods by solvophobic interactions. Methods of preparing the nanorods assemblies include the infusion of the rice-shaped colloidal superparticles into microchannels patterned on a substrate, wherein the rice-shaped colloidal superparticles' long axes align in the microchannels.

主权项

1. A rice-shaped colloidal superparticle, comprising a plurality of nanorods having a long axis in excess of about three microns and a length to diameter ratio in excess of about three to about ten,
wherein said colloidal superparticles are aligned along the long axis of said rice-shape to form a nanorods assembly, wherein said colloidal superparticles comprise a multiplicity of nanorods aligned along the long axes of said rice-shaped colloidal superparticles, wherein an average of said long axes of said colloidal superparticle is in excess of 3 microns, wherein the length of said nanorods assembly is in excess of about 50 microns and the diameter perpendicular to said length of said nanorods assembly is less than said average of said long axes of said colloidal superparticles, and wherein a polarization ratio of said nanorods assembly is equal to or greater than a polarization ratio of nanorods in said colloidal superparticles, and wherein said nanorods comprise CdSe/CdS, CdSe:Te/CdS, Mn-doped CdSe/CdS, Au, Cu, Fe, Co, Ni, indium oxide, gallium oxide, CdSe, CdS, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, InP, InAs, GaP, GaAs, PbS, PbSe, PbTe, InCuS, InCuSe, InAgS, InAgSe, InAgTe, or any combination thereof.