| 发明名称 | Optoelectronic semiconductor chip having reduced strain between different constituent materials of the chip | ||
| 摘要 | An optoelectronic semiconductor chip includes a semiconductor layer stack including a nitride compound semiconductor material on a carrier substrate, wherein the semiconductor layer stack includes an active layer that emits an electromagnetic radiation, the semiconductor layer stack being arranged between a layer of a first conductivity and a layer of a second conductivity, the layer of the first conductivity is adjacent a front of the semiconductor layer stack, the layer of the first conductivity electrically connects to a first electrical connection layer covering at least a portion of a back of the semiconductor layer stack, and the layer of the second conductivity type electrically connects to a second electrical connection layer arranged at the back. | ||
| 申请公布号 | US9293652(B2) | 申请公布日期 | 2016.03.22 |
| 申请号 | US201514818630 | 申请日期 | 2015.08.05 |
| 申请人 | OSRAM Opto Semiconductors GmbH | 发明人 | Bergbauer Werner;Rode Patrick;Strassburg Martin |
| 分类号 | H01L33/00;H01L33/12;H01L33/50;H01L33/20;H01L33/38;H01L33/32;H01L33/62;H01L33/22;B82Y40/00 | 主分类号 | H01L33/00 |
| 代理机构 | DLA Piper LLP (US) | 代理人 | DLA Piper LLP (US) |
| 主权项 | 1. An optoelectronic semiconductor chip comprising: a semiconductor layer stack comprising a nitride compound semiconductor material on a carrier substrate, wherein the semiconductor layer stack comprises an active layer that emits an electromagnetic radiation, the semiconductor layer stack being arranged between a layer of a first conductivity and a layer of a second conductivity, the layer of the first conductivity is adjacent a front of the semiconductor layer stack, the layer of the first conductivity connects electrically to a first electrical connection layer that covers at least a back portion of the semiconductor layer stack, the layer of the second conductivity electrically connects to a second electrical connection layer arranged at the back, the carrier substrate comprises a surface containing silicon facing the semiconductor layer stack, wherein the carrier substrate is a growth substrate for the semiconductor layer stack, and an interlayer is arranged between the carrier substrate and the active layer of the semiconductor layer stack such that the nitride compound semiconductor material of the semiconductor layer stack is compressively strained. | ||
| 地址 | DE | ||