| 发明名称 |
Graphene and metal interconnects with reduced contact resistance |
| 摘要 |
A structure including a first metal line in a first interconnect level, the first metal line comprising one or more graphene portions, a second metal line in a second interconnect level above the first interconnect level, the second metal line comprising one or more graphene portions, and a metal via comprising a palladium liner extends vertically and electrically connects the first metal line with the second metal line, the via is at least partially embedded in the first metal line such that the palladium liner is in direct contact with at least an end portion of the one or more graphene portions of the first metal line. |
| 申请公布号 |
US9293412(B2) |
申请公布日期 |
2016.03.22 |
| 申请号 |
US201414559962 |
申请日期 |
2014.12.04 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Bao Junjing;Bonilla Griselda;Choi Samuel S.;Filippi Ronald G.;Lustig Naftali E.;Simon Andrew H. |
| 分类号 |
H01L23/522;H01L21/768;H01L23/532 |
主分类号 |
H01L23/522 |
| 代理机构 |
|
代理人 |
Kelly L. Jeffrey;Meyers Steven |
| 主权项 |
1. A structure comprising:
a first metal line in a first interconnect level, the first metal line comprising one or more graphene portions; a second metal line in a second interconnect level above the first interconnect level, the second metal line comprising one or more graphene portions; a metal via comprising a palladium liner extending vertically and electrically connecting the first metal line with the second metal line, the metal via is at least partially embedded in the first metal line such that the palladium liner is in direct contact with at least an end portion of the one or more graphene portions of the first metal line; and a palladium cap in direct contact with a conductive interconnect material of the metal via and an end portion of the one or more graphene portions of the second metal line. |
| 地址 |
Armonk NY US |
