Semiconductor device

摘要

A semiconductor device includes a lower interlayer insulating layer, a first stopper layer, and an upper interlayer insulating layer sequentially stacked on a substrate. First and second lower conductive layers, which are laterally separated from each other, are provided in the lower interlayer insulating layer. First and second upper via plugs are connected to the first and second lower conductive layers, respectively, through the upper interlayer insulating layer and the first stopper layer. Further, between the first and second upper via plugs, at least one line-shaped shield via plug extends into the lower interlayer insulating layer through the first stopper layer. The shield via plug is in an electrically-floating state.

主权项

1. A semiconductor device, comprising:
a lower interlayer insulating layer, a first stopper layer, and an upper interlayer insulating layer sequentially stacked on a substrate; first and second lower conductive layers provided in the lower interlayer insulating layer and laterally separated from each other; first and second upper via plugs penetrating the upper interlayer insulating layer and the first stopper layer, the first and second upper via plugs connected to the first and second lower conductive layers, respectively; a shield via plug provided between the first and second upper via plugs to penetrate the first stopper layer and extend from the upper interlayer insulating layer into the lower interlayer insulating layer; and first, second, and third upper conductive layers provided on the upper interlayer insulating layer and connected to the first upper via plug, the second upper via plug, and the shield via plug, respectively, wherein the shield via plug has a line-shaped pattern in a plan view, comprises a conductive layer, and is electrically separated from the first and second lower conductive layers.