Substrate processing method

摘要

In a substrate processing apparatus (1), a silicon oxide film on a main surface of a substrate (9) is removed in an oxide film removing part (4) and then a silylation material is applied to the main surface, to thereby perform a silylation process in a silylation part (6). It is thereby possible to lengthen the Q time from the removal of the silicon oxide film to the formation of the silicon germanium film and reduce the temperature for prebaking in the formation of the silicon germanium film.

主权项

1. A substrate processing method for processing a silicon substrate, comprising the steps of:
a) removing a silicon oxide film from a main surface of a silicon substrate; b) applying a silylation material to said main surface to thereby perform a silylation process thereon so that the silylated main surface is in a state where growth of a natural oxide film is suppressed, and c) performing a process for forming a silicon germanium film, on said main surface, wherein said step b) is performed without moving said silicon substrate after said step a), said step a) comprises the steps of a1) applying a removal liquid used for removing said silicon oxide film, onto said main surface; and a2) applying a rinse liquid onto said main surface, wherein oxygen concentration in at least one of said removal liquid and said rinse liquid which includes dissolved inert gas, is reduced to 20 ppb or less.