主权项 |
1. A plasma processing apparatus comprising:
a case; a discharge electrode provided in the case; and an RF power supply configured to generate plasma, wherein the RF power supply includes: an RF signal circuit configured to determine a frequency; a low-voltage RF power circuit electrically connected to the RF signal circuit and configured to generate low-voltage RF power; and a booster circuit electrically connected to the low-voltage RF power circuit and configured to generate high-voltage RF power, wherein an RF power circuit includes at least the low-voltage RF power circuit and the booster circuit, each being disposed in the case in which the discharge electrode is provided, and configures a plasma module, a plurality of plasma modules are connected in parallel with each other, the plasma modules being individually configured of the discharge electrode, the RF power circuit, and the case, the RF signal circuit is disposed independently from the plurality of the plasma modules, and a frequency signal from the RF signal circuit is inputted to only one of the plurality of the plasma modules, and transmitted between the plurality of plasma modules in parallel via one or more pairs of connectors, each pair of connectors being disposed within the case and connecting adjacent plasma modules. |