| 主权项 |
1. A method of forming a film including a silicon film on a base, comprising:
forming a seed layer on a surface of the base by heating the base and supplying an aminosilane-based gas onto the heated base surface; and forming the silicon film on the seed layer by heating the base and supplying a silane-based gas containing no amino group onto the seed layer of the surface of the heated base, wherein a molecule of the aminosilane-based gas used in forming a seed layer comprises two or more silicon atoms, and wherein the aminosilane-based gas containing two or more silicon atoms in the aminosilane-based gas molecule is selected from gases containing at least one of amino silicon compounds represented by the following formula:
((R1R2)N)nSiXH2X−n−m(R3)m: (B) wherein in Formula (B), n is the number of amino groups, which is a natural number of 1 to 6, m is the number of alkyl groups, which is 0 or a natural number of 1 to 5, R1=CH3, R2=C2H5 and R3=C3H7, R1=R2=R3, or they may not be the same, R3=Cl, and X is a natural number of not less than 2. |
