发明名称 |
Defect discovery and inspection sensitivity optimization using automated classification of corresponding electron beam images |
摘要 |
Various embodiments for classifying defects detected on a wafer are provided. One method includes acquiring an electron beam image generated by a defect review tool for a location of a defect detected on a wafer by a wafer inspection tool. The method also includes determining a classification of the defect based on at least the electron beam image and without input from a user. The method may also include feeding back the classification results to the wafer inspection tool and optimizing the parameters of the tool to maximize sensitivity to the defects of interest. |
申请公布号 |
US9293298(B2) |
申请公布日期 |
2016.03.22 |
申请号 |
US201414528941 |
申请日期 |
2014.10.30 |
申请人 |
KLA-Tencor Corp. |
发明人 |
Lauber Jan A. |
分类号 |
H01J37/26;G01N23/22;G01N23/00;G01N21/00 |
主分类号 |
H01J37/26 |
代理机构 |
|
代理人 |
Mewherter Ann Marie |
主权项 |
1. A computer-implemented method for classifying defects detected on a wafer, comprising:
acquiring an electron beam image generated by a defect review tool for a location of a defect detected on a wafer by a wafer inspection tool, wherein an inspection process used by the wafer inspection tool to detect the defect is setup to detect defects having sizes that are below a resolution limit of the wafer inspection tool; and determining a classification of the defect based on at least the electron beam image and without input from a user, wherein said acquiring and said determining are performed using a computer system. |
地址 |
Milpitas CA US |