Semiconductor device and method for fabricating the same, and microprocessor, processor, system, data storage system and memory system including the semiconductor device

摘要

A semiconductor device includes first lines extending in a first direction; second lines extending in a second direction crossing with the first direction; and first resistance variable elements defined between the first lines and the second lines and each including a first substance layer and a second substance layer, wherein the first substance layer extends in the first direction and the second substance layer extends in the second direction.

主权项

1. A method for fabricating a semiconductor device, comprising:
forming first structures over a substrate which extend in a first direction, the first structures comprising first lines and a first substance layer in a stacked configuration; and forming second structures which extend in a second direction crossing with the first direction, the second structures comprising second lines and a second substance layer in a stacked configuration; wherein a plurality of resistance variable elements are defined between the first lines and the second lines at crossing regions between the first substance layer and the second substance layer.