| 发明名称 | Semiconductor chip and method of manufacturing the same | ||
| 摘要 | A chip includes a substrate and a dielectric layer disposed on the substrate. The dielectric layer includes a first dielectric region and a second dielectric region surrounding an outer periphery of the first dielectric region. A top surface of the first dielectric region is disposed below a top surface of the second dielectric region. The chip further includes a metal pad disposed in a through-hole in the first dielectric region and contacting a portion of the substrate. | ||
| 申请公布号 | US9293430(B2) | 申请公布日期 | 2016.03.22 |
| 申请号 | US201514717606 | 申请日期 | 2015.05.20 |
| 申请人 | Semiconductor Manufacturing International (Shanghai) Corporation | 发明人 | Chen Fucheng |
| 分类号 | H01L23/52;H01L23/00 | 主分类号 | H01L23/52 |
| 代理机构 | Innovation Counsel LLP | 代理人 | Innovation Counsel LLP |
| 主权项 | 1. A chip comprising: a substrate; a dielectric layer disposed on the substrate, wherein the dielectric layer includes a first dielectric region and a second dielectric region surrounding an outer periphery of the first dielectric region, and wherein a top surface of the first dielectric region is disposed below a top surface of the second dielectric region; and a metal pad disposed in a through-hole in the first dielectric region and contacting a portion of the substrate. | ||
| 地址 | CN | ||