| 发明名称 | Solid-state electronic device including dielectric bismuth niobate film formed from solution | ||
| 摘要 | A solid-state electronic device according to the present invention includes: an oxide layer (possibly containing inevitable impurities) that is formed by heating, in an atmosphere containing oxygen, a precursor layer obtained from a precursor solution as a start material including both a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) as solutes, the oxide layer consisting of the bismuth (Bi) and the niobium (Nb); wherein the oxide layer is formed by heating at a heating temperature from 520° C. to 650° C. | ||
| 申请公布号 | US9293257(B2) | 申请公布日期 | 2016.03.22 |
| 申请号 | US201214357167 | 申请日期 | 2012.10.25 |
| 申请人 | Japan Science and Technology Agency | 发明人 | Shimoda Tatsuya;Tokumitsu Eisuke;Onoue Masatoshi;Miyasako Takaaki |
| 分类号 | C01G29/00;C01G33/00;H01G4/30;H01G4/12;B05D5/12;H01L21/02;H01L29/84;H01L49/02;H01L27/01;B81C1/00;B81B7/00;H01L21/768;H01L21/316 | 主分类号 | C01G29/00 |
| 代理机构 | Seed IP Law Group PLLC | 代理人 | Seed IP Law Group PLLC |
| 主权项 | 1. A solid-state electronic device comprising: an oxide layer that is formed by heating, in an atmosphere containing oxygen, a precursor layer obtained from a precursor solution as a starting material including both a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) as solutes, the oxide layer consisting essentially of the bismuth (Bi) and the niobium (Nb); wherein the oxide layer has a crystal phase of a pyrochlore crystal structure. | ||
| 地址 | Saitama JP | ||