SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To suppress variation in transistor characteristics of source/drain diffusion capacitances and the like.SOLUTION: In a first element formation region EFA, a first transistor TRA is formed as one divided transistor. In a second element formation region EFB, a second transistor TRB is formed as the other divided transistor. The first element formation region EFA and the second element formation region EFB are set to the same size. The first element formation region EFA and the second element formation region EFB are arranged while being shifted from each other in an X-direction by a length SPL corresponding to a minimum pitch PT of gate wiring GH.SELECTED DRAWING: Figure 1